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Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.

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Bibliographic Details
Title: Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.
Authors: Hacke, P., Domen, K., Kuramata, A.
Source: Applied Physics Letters; May 1 2000, Vol. 76 Issue 18, p2547-2549, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500685644
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Origin of the nonradiative &lt;112̄0&gt; line defect in lateral epitaxy-grown GaN on SiC substrates.
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  Data: &lt;searchLink fieldCode=&quot;AU&quot; term=&quot;%22Hacke%2C+P%2E%22&quot;&gt;Hacke, P.&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AU&quot; term=&quot;%22Domen%2C+K%2E%22&quot;&gt;Domen, K.&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AU&quot; term=&quot;%22Kuramata%2C+A%2E%22&quot;&gt;Kuramata, A.&lt;/searchLink&gt;
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Applied+Physics+Letters%22&quot;&gt;Applied Physics Letters&lt;/searchLink&gt;; May 1 2000, Vol. 76 Issue 18, p2547-2549, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500685644
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.126404
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2547
    Titles:
      – TitleFull: Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.
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            NameFull: Hacke, P.
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            NameFull: Domen, K.
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            NameFull: Kuramata, A.
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            – D: 01
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              Text: May 1 2000
              Type: published
              Y: 2000
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              Value: 76
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              Value: 18
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            – TitleFull: Applied Physics Letters
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