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Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.

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Bibliographic Details
Title: Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.
Authors: Hacke, P., Domen, K., Kuramata, A.
Source: Applied Physics Letters; May 1 2000, Vol. 76 Issue 18, p2547-2549, 3p
Database: Applied Science & Technology Source
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