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Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions.

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Title: Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions.
Authors: Ren, Q. W., Nanver, L. K., Visser, C. C. G.
Source: Journal of Materials Science: Materials in Electronics; Jun2001, Vol. 12, p313-316, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500724263
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jun2001, Vol. 12, p313-316, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500724263
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 313
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      – TitleFull: Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions.
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            NameFull: Ren, Q. W.
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            NameFull: Nanver, L. K.
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            NameFull: Visser, C. C. G.
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            – D: 01
              M: 06
              Text: Jun2001
              Type: published
              Y: 2001
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              Value: 12
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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