Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer.

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Bibliographic Details
Title: Interface control of Bi4Ti3O12 film growth on Si(100) by use of an ultrathin silicon oxynitride buffer layer.
Authors: Rokuta, E., Choi, J.-H., Hotta, Y.
Source: Applied Physics Letters; September 17 2001, Vol. 79 Issue 12, p1858-1860, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.1400078