Cracking mechanism in AlN(112̄0)/α-Al2O3(11̄02) heteroepitaxial films growth by MOCVD.

Saved in:

Bibliographic Details
Title:	Cracking mechanism in AlN(112̄0)/α-Al2O3(11̄02) heteroepitaxial films growth by MOCVD.
Authors:	Kaigawa, K., Shibata, T., Nakamura, Y.
Source:	Journal of Materials Science; October 1 2001, Vol. 36 Issue 19, p4649-4659, 11p
Database:	Applied Science & Technology Source

Description
ISSN:	00222461