Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.
Saved in:
| Title: | Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors. |
|---|---|
| Authors: | Alam, K., Zaman, S., Chowdhury, M. M. |
| Source: | Journal of Applied Physics; July 15 2002, Vol. 92 Issue 2, p937-943, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.1486022 |
