APA (7th ed.) Citation

Alam, K., Zaman, S., & Chowdhury, M. M. (2002). Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors. Journal of Applied Physics, 92(2), 937. https://doi.org/10.1063/1.1486022

Chicago Style (17th ed.) Citation

Alam, K., S. Zaman, and M. M. Chowdhury. "Effects of Inelastic Scattering on Direct Tunneling Gate Leakage Current in Deep Submicron Metal-oxide-semiconductor Transistors." Journal of Applied Physics 92, no. 2 (2002): 937. https://doi.org/10.1063/1.1486022.

MLA (9th ed.) Citation

Alam, K., et al. "Effects of Inelastic Scattering on Direct Tunneling Gate Leakage Current in Deep Submicron Metal-oxide-semiconductor Transistors." Journal of Applied Physics, vol. 92, no. 2, 2002, p. 937, https://doi.org/10.1063/1.1486022.