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Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.

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Bibliographic Details
Title: Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors.
Authors: Alam, K., Zaman, S., Chowdhury, M. M.
Source: Journal of Applied Physics; July 15 2002, Vol. 92 Issue 2, p937-943, 7p
Database: Applied Science & Technology Source
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