Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.

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Bibliographic Details
Title: Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.
Authors: Ruppalt, L. B., Stafford, S., Yuan, D.
Source: Solid-State Electronics; February 2003, Vol. 47 Issue 2, p253-257, 5p
Database: Applied Science & Technology Source
Description
ISSN:00381101
DOI:10.1016/S0038-1101(02)00203-4