APA (7th ed.) Citation

Ruppalt, L. B., Stafford, S., & Yuan, D. (2003). Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC. Solid-State Electronics, 47(2), 253. https://doi.org/10.1016/S0038-1101(02)00203-4

Chicago Style (17th ed.) Citation

Ruppalt, L. B., S. Stafford, and D. Yuan. "Using a PLD BN/AlN Composite as an Annealing Cap for Ion Implanted SiC." Solid-State Electronics 47, no. 2 (2003): 253. https://doi.org/10.1016/S0038-1101(02)00203-4.

MLA (9th ed.) Citation

Ruppalt, L. B., et al. "Using a PLD BN/AlN Composite as an Annealing Cap for Ion Implanted SiC." Solid-State Electronics, vol. 47, no. 2, 2003, p. 253, https://doi.org/10.1016/S0038-1101(02)00203-4.