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Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.

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Bibliographic Details
Title: Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.
Authors: Ruppalt, L. B., Stafford, S., Yuan, D.
Source: Solid-State Electronics; February 2003, Vol. 47 Issue 2, p253-257, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500987806
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500987806
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1016/S0038-1101(02)00203-4
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 253
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      – TitleFull: Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.
        Type: main
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            NameFull: Ruppalt, L. B.
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            NameFull: Stafford, S.
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            NameFull: Yuan, D.
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              M: 02
              Text: February 2003
              Type: published
              Y: 2003
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              Value: 47
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            – TitleFull: Solid-State Electronics
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