View in EDS

Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.

Saved in:
Bibliographic Details
Title: Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC.
Authors: Ruppalt, L. B., Stafford, S., Yuan, D.
Source: Solid-State Electronics; February 2003, Vol. 47 Issue 2, p253-257, 5p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first