A 22-nm Damascene-Gate MOSFET Fabrication With 0.9-nm EOT and Local Channel Implantation.

Saved in:
Bibliographic Details
Title: A 22-nm Damascene-Gate MOSFET Fabrication With 0.9-nm EOT and Local Channel Implantation.
Authors: Choe, Jeong-Dong, Lee, Chang-Sub, Kim, Sung-Ho
Source: IEEE Electron Device Letters; March 2003, Vol. 24 Issue 3, p195-197, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2003.811401