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A 22-nm Damascene-Gate MOSFET Fabrication With 0.9-nm EOT and Local Channel Implantation.

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Bibliographic Details
Title: A 22-nm Damascene-Gate MOSFET Fabrication With 0.9-nm EOT and Local Channel Implantation.
Authors: Choe, Jeong-Dong, Lee, Chang-Sub, Kim, Sung-Ho
Source: IEEE Electron Device Letters; March 2003, Vol. 24 Issue 3, p195-197, 3p
Database: Applied Science & Technology Source
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