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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm.

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Bibliographic Details
Title:	Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm.
Authors:	Pope, I. A., Smowton, P. M., Blood, P.
Source:	Applied Physics Letters; April 28 2003, Vol. 82 Issue 17, p2755-2757, 3p
Database:	Applied Science & Technology Source

Description
ISSN:	00036951
DOI:	10.1063/1.1570515