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Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.

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Title: Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.
Authors: Zhan, H. H., Nötzel, R., Hamhuis, G. J.
Source: Journal of Applied Physics; May 15 2003 pt1, Vol. 93 Issue 10, p5953-5958, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501037977
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.
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  Data: <searchLink fieldCode="AU" term="%22Zhan%2C+H%2E+H%2E%22">Zhan, H. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Nötzel%2C+R%2E%22">Nötzel, R.</searchLink><br /><searchLink fieldCode="AU" term="%22Hamhuis%2C+G%2E+J%2E%22">Hamhuis, G. J.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 15 2003 pt1, Vol. 93 Issue 10, p5953-5958, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501037977
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.1566457
    Languages:
      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 5953
    Titles:
      – TitleFull: Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing.
        Type: main
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            NameFull: Zhan, H. H.
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            NameFull: Nötzel, R.
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            NameFull: Hamhuis, G. J.
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            – D: 15
              M: 05
              Text: May 15 2003 pt1
              Type: published
              Y: 2003
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              Value: 93
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              Value: 10
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            – TitleFull: Journal of Applied Physics
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