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Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors.

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Bibliographic Details
Title: Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors.
Authors: Meziani, Y. M., Łusakowski, J., Knap, W.
Source: Journal of Applied Physics; 11/15/2004, Vol. 96 Issue 10, p5761-5765, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501060718
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 11/15/2004, Vol. 96 Issue 10, p5761-5765, 5p
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        Value: 10.1063/1.1806991
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        Text: English
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      – TitleFull: Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors.
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              Text: 11/15/2004
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              Y: 2004
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