APA (7th ed.) Citation

Zaumseil, P., & Schroeder, T. (2005). A complex x-ray characterization of epitaxially grown high-K gate dielectrics. Journal of Physics: D Applied Physics, 38, A179. https://doi.org/10.1088/0022-3727/38/10A/034

Chicago Style (17th ed.) Citation

Zaumseil, P., and T. Schroeder. "A Complex X-ray Characterization of Epitaxially Grown High-K Gate Dielectrics." Journal of Physics: D Applied Physics 38 (2005): A179. https://doi.org/10.1088/0022-3727/38/10A/034.

MLA (9th ed.) Citation

Zaumseil, P., and T. Schroeder. "A Complex X-ray Characterization of Epitaxially Grown High-K Gate Dielectrics." Journal of Physics: D Applied Physics, vol. 38, 2005, p. A179, https://doi.org/10.1088/0022-3727/38/10A/034.