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A complex x-ray characterization of epitaxially grown high-K gate dielectrics.

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Title: A complex x-ray characterization of epitaxially grown high-K gate dielectrics.
Authors: Zaumseil, P., Schroeder, T.
Source: Journal of Physics: D Applied Physics; May 21 2005, Vol. 38, pA179-A183, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501087266
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: A complex x-ray characterization of epitaxially grown high-K gate dielectrics.
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      – Type: doi
        Value: 10.1088/0022-3727/38/10A/034
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: A179
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      – TitleFull: A complex x-ray characterization of epitaxially grown high-K gate dielectrics.
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            NameFull: Zaumseil, P.
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              Text: May 21 2005
              Type: published
              Y: 2005
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              Value: 38
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            – TitleFull: Journal of Physics: D Applied Physics
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