APA (7th ed.) Citation

Saitoh, M., Shibata, H., & Momose, H. (1985). Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiation. Journal of the Electrochemical Society, 132, 2463. https://doi.org/10.1149/1.2113600

Chicago Style (17th ed.) Citation

Saitoh, M., H. Shibata, and H. Momose. "Degradation Mechanism of Lightly Doped Drain (LDD) N-channel MOSFET's Studied by Ultraviolet Light Irradiation." Journal of the Electrochemical Society 132 (1985): 2463. https://doi.org/10.1149/1.2113600.

MLA (9th ed.) Citation

Saitoh, M., et al. "Degradation Mechanism of Lightly Doped Drain (LDD) N-channel MOSFET's Studied by Ultraviolet Light Irradiation." Journal of the Electrochemical Society, vol. 132, 1985, p. 2463, https://doi.org/10.1149/1.2113600.