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Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiation.

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Bibliographic Details
Title: Degradation mechanism of lightly doped drain (LDD) n-channel MOSFET's studied by ultraviolet light irradiation.
Authors: Saitoh, M., Shibata, H., Momose, H.
Source: Journal of the Electrochemical Society; October 1985, Vol. 132, p2463-2466, 4p
Database: Applied Science & Technology Source
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