Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.
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| Title: | Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy. |
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| Authors: | Nojima, S., Tanaka, H., Asahi, H. |
| Source: | Journal of Applied Physics; May 15 1986, Vol. 59, p3489-3494, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.336819 |
