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Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.

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Bibliographic Details
Title: Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.
Authors: Nojima, S., Tanaka, H., Asahi, H.
Source: Journal of Applied Physics; May 15 1986, Vol. 59, p3489-3494, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501183269
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Nojima%2C+S%2E%22">Nojima, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Tanaka%2C+H%2E%22">Tanaka, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Asahi%2C+H%2E%22">Asahi, H.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 15 1986, Vol. 59, p3489-3494, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501183269
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      – Type: doi
        Value: 10.1063/1.336819
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 3489
    Titles:
      – TitleFull: Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.
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          Name:
            NameFull: Nojima, S.
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            NameFull: Tanaka, H.
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            NameFull: Asahi, H.
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            – D: 15
              M: 05
              Text: May 15 1986
              Type: published
              Y: 1986
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              Value: 59
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            – TitleFull: Journal of Applied Physics
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