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Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.

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Bibliographic Details
Title: Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.
Authors: Nojima, S., Tanaka, H., Asahi, H.
Source: Journal of Applied Physics; May 15 1986, Vol. 59, p3489-3494, 6p
Database: Applied Science & Technology Source
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