Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.

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Bibliographic Details
Title: Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.
Authors: Kinoshita, K., Noshiro, H., Yoshida, C.
Source: Journal of Materials Research; March 2008, Vol. 23 Issue 3, p812-818, 7p
Database: Applied Science & Technology Source
Description
ISSN:08842914
DOI:10.1557/jmr.2008.0093