Kinoshita, K., Noshiro, H., & Yoshida, C. (2008). Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model. Journal of Materials Research, 23(3), 812. https://doi.org/10.1557/jmr.2008.0093
Chicago Style (17th ed.) CitationKinoshita, K., H. Noshiro, and C. Yoshida. "Universal Understanding of Direct Current Transport Properties of ReRAM Based on a Parallel Resistance Model." Journal of Materials Research 23, no. 3 (2008): 812. https://doi.org/10.1557/jmr.2008.0093.
MLA (9th ed.) CitationKinoshita, K., et al. "Universal Understanding of Direct Current Transport Properties of ReRAM Based on a Parallel Resistance Model." Journal of Materials Research, vol. 23, no. 3, 2008, p. 812, https://doi.org/10.1557/jmr.2008.0093.