Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.

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Title: Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.
Authors: Kinoshita, K., Noshiro, H., Yoshida, C.
Source: Journal of Materials Research; March 2008, Vol. 23 Issue 3, p812-818, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501226395
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.
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  Data: <searchLink fieldCode="AU" term="%22Kinoshita%2C+K%2E%22">Kinoshita, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Noshiro%2C+H%2E%22">Noshiro, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Yoshida%2C+C%2E%22">Yoshida, C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Research%22">Journal of Materials Research</searchLink>; March 2008, Vol. 23 Issue 3, p812-818, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501226395
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1557/jmr.2008.0093
    Languages:
      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 812
    Titles:
      – TitleFull: Universal understanding of direct current transport properties of ReRAM based on a parallel resistance model.
        Type: main
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          Name:
            NameFull: Kinoshita, K.
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          Name:
            NameFull: Noshiro, H.
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            NameFull: Yoshida, C.
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            – D: 01
              M: 03
              Text: March 2008
              Type: published
              Y: 2008
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              Value: 23
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