High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.
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| Title: | High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator. |
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| Authors: | Yagi, S., Shimizu, M., Inada, M. |
| Source: | Solid-State Electronics; June 2006, Vol. 50 Issue 6, p1057-1061, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00381101 |
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| DOI: | 10.1016/j.sse.2006.04.041 |
