APA (7th ed.) Citation

Yagi, S., Shimizu, M., & Inada, M. (2006). High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator. Solid-State Electronics, 50(6), 1057. https://doi.org/10.1016/j.sse.2006.04.041

Chicago Style (17th ed.) Citation

Yagi, S., M. Shimizu, and M. Inada. "High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator." Solid-State Electronics 50, no. 6 (2006): 1057. https://doi.org/10.1016/j.sse.2006.04.041.

MLA (9th ed.) Citation

Yagi, S., et al. "High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator." Solid-State Electronics, vol. 50, no. 6, 2006, p. 1057, https://doi.org/10.1016/j.sse.2006.04.041.