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High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.

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Bibliographic Details
Title: High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.
Authors: Yagi, S., Shimizu, M., Inada, M.
Source: Solid-State Electronics; June 2006, Vol. 50 Issue 6, p1057-1061, 5p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501264329
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>; June 2006, Vol. 50 Issue 6, p1057-1061, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501264329
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.sse.2006.04.041
    Languages:
      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 1057
    Titles:
      – TitleFull: High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.
        Type: main
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          Name:
            NameFull: Yagi, S.
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            NameFull: Shimizu, M.
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            NameFull: Inada, M.
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            – D: 01
              M: 06
              Text: June 2006
              Type: published
              Y: 2006
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              Value: 50
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              Value: 6
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
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