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High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.

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Bibliographic Details
Title: High breakdown voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 gate insulator.
Authors: Yagi, S., Shimizu, M., Inada, M.
Source: Solid-State Electronics; June 2006, Vol. 50 Issue 6, p1057-1061, 5p
Database: Applied Science & Technology Source
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