Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology.
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| Title: | Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology. |
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| Authors: | Hartmann, J. M., Abbadie, A., Guinche, Y. |
| Source: | Semiconductor Science & Technology; April 2007, Vol. 22 Issue 4, p354-361, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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| DOI: | 10.1088/0268-1242/22/4/010 |
