APA (7th ed.) Citation

Hartmann, J. M., Abbadie, A., & Guinche, Y. (2007). Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology. Semiconductor Science & Technology, 22(4), 354. https://doi.org/10.1088/0268-1242/22/4/010

Chicago Style (17th ed.) Citation

Hartmann, J. M., A. Abbadie, and Y. Guinche. "Tensile-strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates: I. Film Thickness and Morphology." Semiconductor Science & Technology 22, no. 4 (2007): 354. https://doi.org/10.1088/0268-1242/22/4/010.

MLA (9th ed.) Citation

Hartmann, J. M., et al. "Tensile-strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates: I. Film Thickness and Morphology." Semiconductor Science & Technology, vol. 22, no. 4, 2007, p. 354, https://doi.org/10.1088/0268-1242/22/4/010.