APA (7th ed.) Citation

Wen, C., Wang, Y. M., & Wan, W. (2009). Nature of interfacial defects and their roles in strain relaxation at highly lattice mismatched 3C-SiC/Si (001) interface. Journal of Applied Physics, 106(7), 073522-1. https://doi.org/10.1063/1.3234380

Chicago Style (17th ed.) Citation

Wen, C., Y. M. Wang, and W. Wan. "Nature of Interfacial Defects and Their Roles in Strain Relaxation at Highly Lattice Mismatched 3C-SiC/Si (001) Interface." Journal of Applied Physics 106, no. 7 (2009): 073522-1. https://doi.org/10.1063/1.3234380.

MLA (9th ed.) Citation

Wen, C., et al. "Nature of Interfacial Defects and Their Roles in Strain Relaxation at Highly Lattice Mismatched 3C-SiC/Si (001) Interface." Journal of Applied Physics, vol. 106, no. 7, 2009, pp. 073522-1, https://doi.org/10.1063/1.3234380.