High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy.
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| Title: | High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy. |
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| Authors: | Lew, K. L., Yoon, S. F., Wang, H. |
| Source: | IEEE Electron Device Letters; December 2007, Vol. 28 Issue 12, p1083-1085, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07413106 |
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| DOI: | 10.1109/LED.2007.910000 |
