APA (7th ed.) Citation

Lew, K. L., Yoon, S. F., & Wang, H. (2007). High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy. IEEE Electron Device Letters, 28(12), 1083. https://doi.org/10.1109/LED.2007.910000

Chicago Style (17th ed.) Citation

Lew, K. L., S. F. Yoon, and H. Wang. "High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy." IEEE Electron Device Letters 28, no. 12 (2007): 1083. https://doi.org/10.1109/LED.2007.910000.

MLA (9th ed.) Citation

Lew, K. L., et al. "High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy." IEEE Electron Device Letters, vol. 28, no. 12, 2007, p. 1083, https://doi.org/10.1109/LED.2007.910000.