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High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy.

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Title: High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy.
Authors: Lew, K. L., Yoon, S. F., Wang, H.
Source: IEEE Electron Device Letters; December 2007, Vol. 28 Issue 12, p1083-1085, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501520460
AccessLevel: 2
PubType: Academic Journal
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  Data: High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy.
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  Data: <searchLink fieldCode="AU" term="%22Lew%2C+K%2E+L%2E%22">Lew, K. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Yoon%2C+S%2E+F%2E%22">Yoon, S. F.</searchLink><br /><searchLink fieldCode="AU" term="%22Wang%2C+H%2E%22">Wang, H.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; December 2007, Vol. 28 Issue 12, p1083-1085, 3p
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      – Type: doi
        Value: 10.1109/LED.2007.910000
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      – Code: eng
        Text: English
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      – TitleFull: High-Gain Low Turn-On Voltage AlGaAs/GaAsNSb/GaAs Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy.
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            NameFull: Lew, K. L.
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            NameFull: Yoon, S. F.
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            NameFull: Wang, H.
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              Text: December 2007
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              Y: 2007
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              Value: 12
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