High field sensitivity at room temperature in p-n junction based bilayered manganite devices.
Saved in:
| Title: | High field sensitivity at room temperature in p-n junction based bilayered manganite devices. |
|---|---|
| Authors: | Vachhani, P. S., Markna, J. H., Kuberkar, D. G. |
| Source: | Applied Physics Letters; January 28 2008, Vol. 92 Issue 4, p043506-043506, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/1.2838744 |