High field sensitivity at room temperature in p-n junction based bilayered manganite devices.

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Bibliographic Details
Title: High field sensitivity at room temperature in p-n junction based bilayered manganite devices.
Authors: Vachhani, P. S., Markna, J. H., Kuberkar, D. G.
Source: Applied Physics Letters; January 28 2008, Vol. 92 Issue 4, p043506-043506, 1p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.2838744