Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.

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Bibliographic Details
Title: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.
Authors: Maeng, W. J., Kim, Woo-Hee, Koo, Ja Hoon
Source: Applied Physics Letters; February 22 2010, Vol. 96 Issue 8, p082905-1-082905-3, 3p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.3330929