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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.

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Title: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.
Authors: Maeng, W. J., Kim, Woo-Hee, Koo, Ja Hoon
Source: Applied Physics Letters; February 22 2010, Vol. 96 Issue 8, p082905-1-082905-3, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501557008
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.
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  Data: <searchLink fieldCode="AU" term="%22Maeng%2C+W%2E+J%2E%22">Maeng, W. J.</searchLink><br /><searchLink fieldCode="AU" term="%22Kim%2C+Woo-Hee%22">Kim, Woo-Hee</searchLink><br /><searchLink fieldCode="AU" term="%22Koo%2C+Ja+Hoon%22">Koo, Ja Hoon</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; February 22 2010, Vol. 96 Issue 8, p082905-1-082905-3, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501557008
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      – Type: doi
        Value: 10.1063/1.3330929
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 082905-1
    Titles:
      – TitleFull: Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer.
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            NameFull: Maeng, W. J.
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            NameFull: Kim, Woo-Hee
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            NameFull: Koo, Ja Hoon
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              Text: February 22 2010
              Type: published
              Y: 2010
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