Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101̄1̄) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy.
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| Title: | Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101̄1̄) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy. |
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| Authors: | Onuma, T., Uedono, A., Asamizu, H. |
| Source: | Applied Physics Letters; March 1 2010, Vol. 96 Issue 9, p091913-1-091913-3, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.3337098 |
