Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film.

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Bibliographic Details
Title: Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film.
Authors: Watanabe, Hiroshi, Matsushita, Daisuke, Muraoka, Kouichi
Source: IEEE Transactions on Electron Devices; May 2010, Vol. 57 Issue 5, p1129-1136, 8p
Database: Applied Science & Technology Source
Description
ISSN:00189383
DOI:10.1109/TED.2010.2044676