Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film.
Saved in:
| Title: | Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film. |
|---|---|
| Authors: | Watanabe, Hiroshi, Matsushita, Daisuke, Muraoka, Kouichi |
| Source: | IEEE Transactions on Electron Devices; May 2010, Vol. 57 Issue 5, p1129-1136, 8p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 501601666 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Watanabe%2C+Hiroshi%22">Watanabe, Hiroshi</searchLink><br /><searchLink fieldCode="AU" term="%22Matsushita%2C+Daisuke%22">Matsushita, Daisuke</searchLink><br /><searchLink fieldCode="AU" term="%22Muraoka%2C+Kouichi%22">Muraoka, Kouichi</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; May 2010, Vol. 57 Issue 5, p1129-1136, 8p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501601666 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TED.2010.2044676 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 1129 Titles: – TitleFull: Universal Tunnel Mass and Charge Trapping in [(SiO2)1—x(Si3N4)x]1—ySiy Film. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Watanabe, Hiroshi – PersonEntity: Name: NameFull: Matsushita, Daisuke – PersonEntity: Name: NameFull: Muraoka, Kouichi IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May 2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 00189383 Numbering: – Type: volume Value: 57 – Type: issue Value: 5 Titles: – TitleFull: IEEE Transactions on Electron Devices Type: main |
| ResultId | 1 |