Tunneling Field-Effect Transistor: Capacitance Components and Modeling.

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Bibliographic Details
Title: Tunneling Field-Effect Transistor: Capacitance Components and Modeling.
Authors: Yang, Yue, Tong, Xin, Yang, Li-Tao
Source: IEEE Electron Device Letters; July 2010, Vol. 31 Issue 7, p752-754, 3p
Database: Applied Science & Technology Source
Description
ISSN:07413106
DOI:10.1109/LED.2010.2047240