Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films.
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| Title: | Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films. |
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| Authors: | Wu, I.-W., Chiang, A., Fuse, M. |
| Source: | Journal of Applied Physics; May 15 1989, Vol. 65, p4036-4039, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.343327 |
