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Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films.

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Bibliographic Details
Title: Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films.
Authors: Wu, I.-W., Chiang, A., Fuse, M.
Source: Journal of Applied Physics; May 15 1989, Vol. 65, p4036-4039, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501650965
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films.
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  Data: <searchLink fieldCode="AU" term="%22Wu%2C+I%2E-W%2E%22">Wu, I.-W.</searchLink><br /><searchLink fieldCode="AU" term="%22Chiang%2C+A%2E%22">Chiang, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Fuse%2C+M%2E%22">Fuse, M.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; May 15 1989, Vol. 65, p4036-4039, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501650965
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.343327
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 4036
    Titles:
      – TitleFull: Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low-pressure chemical vapor deposited amorphous silicon films.
        Type: main
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            NameFull: Wu, I.-W.
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            NameFull: Chiang, A.
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            NameFull: Fuse, M.
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            – D: 15
              M: 05
              Text: May 15 1989
              Type: published
              Y: 1989
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              Value: 00218979
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              Value: 65
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            – TitleFull: Journal of Applied Physics
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