Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates.
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| Title: | Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates. |
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| Authors: | Myers-Ward, R. L., VanMil, B. L., Lew, K.-K. |
| Source: | Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p054906-1-054906-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.3475152 |
