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Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates.

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Bibliographic Details
Title: Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates.
Authors: Myers-Ward, R. L., VanMil, B. L., Lew, K.-K.
Source: Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p054906-1-054906-6, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501665106
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates.
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  Data: <searchLink fieldCode="AU" term="%22Myers-Ward%2C+R%2E+L%2E%22">Myers-Ward, R. L.</searchLink><br /><searchLink fieldCode="AU" term="%22VanMil%2C+B%2E+L%2E%22">VanMil, B. L.</searchLink><br /><searchLink fieldCode="AU" term="%22Lew%2C+K%2E-K%2E%22">Lew, K.-K.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; Oct2010, Vol. 108 Issue 4, p054906-1-054906-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501665106
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.3475152
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 054906-1
    Titles:
      – TitleFull: Investigation of deep levels in nitrogen doped 4H-SiC epitaxial layers grown on 4° and 8° off-axis substrates.
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            NameFull: Myers-Ward, R. L.
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            NameFull: VanMil, B. L.
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            NameFull: Lew, K.-K.
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              M: 10
              Text: Oct2010
              Type: published
              Y: 2010
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              Value: 108
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            – TitleFull: Journal of Applied Physics
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