Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers.

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Bibliographic Details
Title: Direct exchange interaction of localized spins associated with unpaired sp electrons in Be-doped low-temperature-grown GaAs layers.
Authors: Bae, K. W., Mohamed, Mohd Ambri, Jung, D. W.
Source: Journal of Applied Physics; Apr2011, Vol. 109 Issue 7, p073918-1-073918-8, 8p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.3567914