Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.
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| Title: | Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine. |
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| Authors: | Okabe, T., Kikkawa, T., Tanaka, H. |
| Source: | Journal of Applied Physics; October 15 1990, Vol. 68, p4064-4067, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.346243 |
